MTP1N100E Datasheet (Motorola)

MTP1N100E, TMOS POWER FET

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP1N100E/D ™ Data Sheet TMOS E-FET.™ Power Field Effect Transistor Designer's MTP1N100E Motorola Preferred Device N Channel Enhancement Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage blocking capability without degrading performance over time.

In addition, this advanced TMOS E FET is designed to withstand high energy in the avalanche and c

MTP1N100E Features

* t power electronic loads are inductive; the data in the figure is taken with a resistive load, which approximates an optimally snubbed inductive load. Power MOSFETs may be safely operated into an inductive load; however, snubbing reduces switching losses. 1200 1000 C, CAPACITANCE (pF) Ciss VDS = 0