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MTP1N100E TMOS POWER FET

MTP1N100E Description

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP1N100E/D ™ Data Sheet TMOS E-FET.™ Power Field Effect Transistor Designer's MTP1N1.

MTP1N100E Features

* t power electronic loads are inductive; the data in the figure is taken with a resistive load, which approximates an optimally snubbed inductive load. Power MOSFETs may be safely operated into an inductive load; however, snubbing reduces switching losses. 1200 1000 C, CAPACITANCE (pF) Ciss VDS = 0

MTP1N100E Applications

* in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
* Robust High Voltage Termination

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Datasheet Details

Part number
MTP1N100E
Manufacturer
Motorola
File Size
203.66 KB
Datasheet
MTP1N100E_Motorola.pdf
Description
TMOS POWER FET

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TMOS POWER FET Motorola
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