* t power electronic loads are inductive; the data in the figure is taken with a resistive load, which approximates an optimally snubbed inductive load. Power MOSFETs may be safely operated into an inductive load; however, snubbing reduces switching losses. 1200 1000 C, CAPACITANCE (pF) Ciss VDS = 0
MTP1N100E Datasheet (203.66 KB)
MTP1N100E
Motorola
203.66 KB
Tmos power fet.
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP1N100E/D ™ Data Sheet TMOS E-FET.™ Power Field Effect Transistor Designer's MTP1N1.
📁 Related Datasheet
MTP1N100 Power MOSFET (Motorola)
MTP1N100E Power Field Effect Transistor (ON Semiconductor)
MTP1N50E TMOS POWER FET (Motorola)
MTP1N60E TMOS POWER FET (Motorola)
MTP1N80E TMOS POWER FET (Motorola)
MTP1N95 Power MOSFET (Motorola)
MTP10-B7F55 Thermopile Sensor (MemsFrontier)
MTP1013C3 -20V P-CHANNEL MOSFET (CYStech Electronics)
MTP10N05 (MTP10N05 / MTP10N06) N-Channel Power MOSFETs (Motorola)
MTP10N06 (MTP10N05 / MTP10N06) N-Channel Power MOSFETs (Motorola)
