Datasheet Specifications
- Part number
- MTP1N100E
- Manufacturer
- Motorola
- File Size
- 203.66 KB
- Datasheet
- MTP1N100E_Motorola.pdf
- Description
- TMOS POWER FET
Description
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP1N100E/D ™ Data Sheet TMOS E-FET.™ Power Field Effect Transistor Designer's MTP1N1.
Features
* t power electronic loads are inductive; the data in the figure is taken with a resistive load, which approximates an optimally snubbed inductive load. Power MOSFETs may be safely operated into an inductive load; however, snubbing reduces switching losses. 1200 1000 C, CAPACITANCE (pF) Ciss VDS = 0Applications
* in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.MTP1N100E Distributors
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