MTP30N06VL - TMOS POWER FET 30 AMPERES 60 VOLTS RDS(on) = 0.050 OHM
MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MTP30N06VL/D TMOS V Power Field Effect Transistor TMOS V is a new technology designed to achieve an on resistance area product about one half that of standard MOSFETs.
This new technology more than doubles the present cell density of our 50 and 60 volt TMOS devices.
Just as with our TMOS E FET designs, TMOS V is designed to withstand high energy in the avalanche and commutation modes.
Designed for
MTP30N06VL Features
* of TMOS V
* On
* resistance Area Product about One
* half that of Standard MOSFETs with New Low Voltage, Low RDS(on) Technology
* Faster Switching than E
* FET Predecessors Features Common to TMOS V and TMOS E
* FETS
* Avalanche Energy Specified
