Datasheet Details
Part number:
MTP33N10E
Manufacturer:
Motorola
File Size:
195.47 KB
Description:
Tmos power fet.
Datasheet Details
Part number:
MTP33N10E
Manufacturer:
Motorola
File Size:
195.47 KB
Description:
Tmos power fet.
MTP33N10E, TMOS POWER FET
www.DataSheet4U.com SEMICONDUCTOR TECHNICAL DATA MOTOROLA Order this document by MTP33N10E/D Designer's TMOS E-FET .™ Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate This advanced TMOS E FET is designed to withstand high energy in the avalanche and commutation modes.
The new energy efficient design also offers a drain to source diode with a fast recovery time.
Designed for low voltage, high speed switching applications in power su
MTP33N10E Features
* load; however, snubbing reduces switching losses. 5000 4500 4000 C, CAPACITANCE (pF) 3500 3000 2500 2000 1500 1000 500 0 10 5 Ciss Crss VDS = 0 V VGS = 0 V TJ = 25°C Ciss Coss Crss 0 VGS VDS 5 10 15 20 25 GATE
* TO
* SOURCE OR DRAIN
* TO
* SOURCE VOLTAGE (VOLTS) Figur
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