MTP30P06V TMOS POWER FET 30 AMPERES 60 VOLTS RDS(on) = 0.080 OHM

Motorola

Description

www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP30P06V/D Designer's TMOS V Power Field Effect Transistor P

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Datasheet Specifications

Part number: MTP30P06V
Manufacturer: Motorola
File Size: 325.35 KB
Datasheet: MTP30P06V_Motorola.pdf
Description: TMOS POWER FET 30 AMPERES 60 VOLTS RDS(on) = 0.080 OHM

Features

* of TMOS V
* On
* resistance Area Product about One
* half that of Standard MOSFETs with New Low Voltage, Low RDS(on) Technology
* Faster Switching than E
* FET Predecessors Features Common to TMOS V and TMOS E
* FETS
* Avalanche Energy Specified

Applications

* in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. D ™ Data Sheet MTP30P06V Motorola Pr

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MTP30P06V TMOS POWER FET AMPERES VOLTS RDSon 0.080 OHM Motorola

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