MTP30P06V Datasheet (Motorola) - TMOS POWER FET 30 AMPERES 60 VOLTS RDS(on) = 0.080 OHM

MTP30P06V, TMOS POWER FET 30 AMPERES 60 VOLTS RDS(on) = 0.080 OHM

www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP30P06V/D Designer's TMOS V Power Field Effect Transistor P Channel Enhancement Mode Silicon Gate TMOS V is a new technology designed to achieve an on resistance area product about one half that of standard MOSFETs.

This new technology more than doubles the present cell density of our 50 and 60 volt TMOS devices.

Just as with our TMOS E FET designs, TMOS V is designed t

MTP30P06V Features

* of TMOS V

* On

* resistance Area Product about One

* half that of Standard MOSFETs with New Low Voltage, Low RDS(on) Technology

* Faster Switching than E

* FET Predecessors Features Common to TMOS V and TMOS E

* FETS

* Avalanche Energy Specified