* of TMOS V
* On
* resistance Area Product about One
* half that of Standard MOSFETs with New Low Voltage, Low RDS(on) Technology
* Faster Switching than E
* FET Predecessors Features Common to TMOS V and TMOS E
* FETS
* Avalanche Energy Specified
MTP36N06V Datasheet (154.68 KB)
MTP36N06V
Motorola
154.68 KB
Tmos power fet.
www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP36N06V/D Designer's TMOS V Power Field Effect Transistor N
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