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MTP5N40E TMOS POWER FET 5.0 AMPERES 400 VOLTS RDS(on) = 1.0 OHM

MTP5N40E Description

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP5N40E/D ™ Data Sheet TMOS E-FET.™ High Energy Power FET Designer's MTP5N40E Motoro.

MTP5N40E Features

* e
* applied drain voltage when the source
* drain diode has undergone forward bias. The curve shows the limitations of IFM and peak VDS for a given rate of change of source current. It is applicable when waveforms similar to those of Figure 11 are present. Full or half
* bridge PW

MTP5N40E Applications

* such as power supplies, PWM motor controls and other inductive loads, the avalanche energy capability is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients.
* Avalanche Energy Capability

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Datasheet Details

Part number
MTP5N40E
Manufacturer
Motorola
File Size
258.70 KB
Datasheet
MTP5N40E_Motorola.pdf
Description
TMOS POWER FET 5.0 AMPERES 400 VOLTS RDS(on) = 1.0 OHM

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TMOS POWER FET 5.0 AMPERES 400 VOLTS RDSon 1.0 OHM Motorola
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