MTP5N40E TMOS POWER FET 5.0 AMPERES 400 VOLTS RDS(on) = 1.0 OHM

Motorola

Description

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP5N40E/D ™ Data Sheet TMOS E-FET.™ High Energy Power FET Designer's MTP5N40E Motoro.

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Datasheet Specifications

Part number: MTP5N40E
Manufacturer: Motorola
File Size: 258.70 KB
Datasheet: MTP5N40E_Motorola.pdf
Description: TMOS POWER FET 5.0 AMPERES 400 VOLTS RDS(on) = 1.0 OHM

Features

* e
* applied drain voltage when the source
* drain diode has undergone forward bias. The curve shows the limitations of IFM and peak VDS for a given rate of change of source current. It is applicable when waveforms similar to those of Figure 11 are present. Full or half
* bridge PW

Applications

* such as power supplies, PWM motor controls and other inductive loads, the avalanche energy capability is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients.
* Avalanche Energy Capability

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MTP5N40E TMOS POWER FET 5.0 AMPERES 400 VOLTS RDSon 1.0 OHM Motorola

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