* e
* applied drain voltage when the source
* drain diode has undergone forward bias. The curve shows the limitations of IFM and peak VDS for a given rate of change of source current. It is applicable when waveforms similar to those of Figure 11 are present. Full or half
* bridge PW
MTP5N40E Datasheet (258.70 KB)
MTP5N40E
Motorola
258.70 KB
Tmos power fet 5.0 amperes 400 volts rds(on) = 1.0 ohm.
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP5N40E/D ™ Data Sheet TMOS E-FET.™ High Energy Power FET Designer's MTP5N40E Motoro.
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