MTP5N40E Datasheet (Motorola) - TMOS POWER FET 5.0 AMPERES 400 VOLTS RDS(on) = 1.0 OHM

MTP5N40E, TMOS POWER FET 5.0 AMPERES 400 VOLTS RDS(on) = 1.0 OHM

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP5N40E/D ™ Data Sheet TMOS E-FET.™ High Energy Power FET Designer's MTP5N40E Motorola Preferred Device N Channel Enhancement Mode Silicon Gate This advanced high voltage TMOS E FET is designed to withstand high energy in the avalanche mode and switch efficiently.

This new high energy device also offers a drain to source diode with fast recovery time.

Designed for high voltage, high speed s

MTP5N40E Features

* e

* applied drain voltage when the source

* drain diode has undergone forward bias. The curve shows the limitations of IFM and peak VDS for a given rate of change of source current. It is applicable when waveforms similar to those of Figure 11 are present. Full or half

* bridge PW