* S) VGS, GATE
* TO
* SOURCE VOLTAGE (VOLTS) 8.0 VGS 6.0 QT 40 4.0 Q1 2.0 Q3 VDS 0 10 20 30 40 50 QG, TOTAL GATE CHARGE (nC) Q2 TJ = 60°C ID = 5.0 A 20 10 0 0 30 60 50 1000 VDD = 25 V ID = 60 A VGS = 5.0 V TJ = 25°C t, TIME (ns) tr tf td(off) 100 td(on) 10 1.0 10 RG, GATE RESISTANCE (
MTP60N05HDL Datasheet (166.09 KB)
MTP60N05HDL
Motorola
166.09 KB
Tmos power fet.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MTP60N05HDL/D
Product Preview
HDTMOS E-FET.™ Power Field Effect Transistor
N
*.
📁 Related Datasheet
MTP60N06HD TMOS POWER FET (Motorola)
MTP6N10 POWER FIELD EFFECT TRANSISTOR (Motorola)
MTP6N60 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR (ST Microelectronics)
MTP6N60E TMOS POWER FET (Motorola)
MTP6N60E Power Field Effect Transistor (ON Semiconductor)
MTP6P20E TMOS POWER FET (Motorola)
MTP6P20E Power MOSFET (ON Semiconductor)
MTP10-B7F55 Thermopile Sensor (MemsFrontier)
MTP1013C3 -20V P-CHANNEL MOSFET (CYStech Electronics)
MTP10N05 (MTP10N05 / MTP10N06) N-Channel Power MOSFETs (Motorola)
