MTP60N05HDL TMOS POWER FET

Motorola

Description

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP60N05HDL/D Product Preview HDTMOS E-FET.™ Power Field Effect Transistor N *.

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Datasheet Specifications

Part number: MTP60N05HDL
Manufacturer: Motorola
File Size: 166.09 KB
Datasheet: MTP60N05HDL_Motorola.pdf
Description: TMOS POWER FET

Features

* S) VGS, GATE
* TO
* SOURCE VOLTAGE (VOLTS) 8.0 VGS 6.0 QT 40 4.0 Q1 2.0 Q3 VDS 0 10 20 30 40 50 QG, TOTAL GATE CHARGE (nC) Q2 TJ = 60°C ID = 5.0 A 20 10 0 0 30 60 50 1000 VDD = 25 V ID = 60 A VGS = 5.0 V TJ = 25°C t, TIME (ns) tr tf td(off) 100 td(on) 10 1.0 10 RG, GATE RESISTANCE (

Applications

* in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
* Avalanche Energy Specified

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MTP60N05HDL TMOS POWER FET Motorola

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