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MTP60N05HDL - TMOS POWER FET

MTP60N05HDL Description

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP60N05HDL/D Product Preview HDTMOS E-FET.™ Power Field Effect Transistor N *.

MTP60N05HDL Features

* S) VGS, GATE
* TO
* SOURCE VOLTAGE (VOLTS) 8.0 VGS 6.0 QT 40 4.0 Q1 2.0 Q3 VDS 0 10 20 30 40 50 QG, TOTAL GATE CHARGE (nC) Q2 TJ = 60°C ID = 5.0 A 20 10 0 0 30 60 50 1000 VDD = 25 V ID = 60 A VGS = 5.0 V TJ = 25°C t, TIME (ns) tr tf td(off) 100 td(on) 10 1.0 10 RG, GATE RESISTANCE (

MTP60N05HDL Applications

* in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
* Avalanche Energy Specified

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Datasheet Details

Part number
MTP60N05HDL
Manufacturer
Motorola
File Size
166.09 KB
Datasheet
MTP60N05HDL_Motorola.pdf
Description
TMOS POWER FET

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TMOS POWER FET Motorola
Motorola MTP60N05HDL-like datasheet