MTP60N06HD Datasheet (Motorola)

MTP60N06HD, TMOS POWER FET

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP60N06HD/D ™ Data Sheet HDTMOS E-FET.™ Power Field Effect Transistor Designer's MTP60N06HD Motorola Preferred Device N Channel Enhancement Mode Silicon Gate This advanced high cell density HDTMOS power FET is designed to withstand high energy in the avalanche and commutation modes.

The new energy efficient design also offers a drain to source diode with a fast recovery time.

Designed for l

MTP60N06HD Features

* which approximates an optimally snubbed inductive load. Power MOSFETs may be safely operated into an inductive load; however, snubbing reduces switching losses. 5000 Ciss 4000 C, CAPACITANCE (pF) VDS = 0 V VGS = 0 V TJ = 25°C 3000 Crss 2000 Coss 1000 Crss 0 10 5 VGS 0 VDS 5 10 15 20 25 Ciss GA