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MTP60N06HD - TMOS POWER FET

MTP60N06HD Description

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP60N06HD/D ™ Data Sheet HDTMOS E-FET.™ Power Field Effect Transistor Designer's MTP.

MTP60N06HD Features

* which approximates an optimally snubbed inductive load. Power MOSFETs may be safely operated into an inductive load; however, snubbing reduces switching losses. 5000 Ciss 4000 C, CAPACITANCE (pF) VDS = 0 V VGS = 0 V TJ = 25°C 3000 Crss 2000 Coss 1000 Crss 0 10 5 VGS 0 VDS 5 10 15 20 25 Ciss GA

MTP60N06HD Applications

* in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
* Avalanche Energy Specified

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Datasheet Details

Part number
MTP60N06HD
Manufacturer
Motorola
File Size
217.16 KB
Datasheet
MTP60N06HD_Motorola.pdf
Description
TMOS POWER FET

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TMOS POWER FET Motorola
Motorola MTP60N06HD-like datasheet