Datasheet Specifications
- Part number
- MTP60N06HD
- Manufacturer
- Motorola
- File Size
- 217.16 KB
- Datasheet
- MTP60N06HD_Motorola.pdf
- Description
- TMOS POWER FET
Description
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP60N06HD/D ™ Data Sheet HDTMOS E-FET.™ Power Field Effect Transistor Designer's MTP.
Features
* which approximates an optimally snubbed inductive load. Power MOSFETs may be safely operated into an inductive load; however, snubbing reduces switching losses. 5000 Ciss 4000 C, CAPACITANCE (pF) VDS = 0 V VGS = 0 V TJ = 25°C 3000 Crss 2000 Coss 1000 Crss 0 10 5 VGS 0 VDS 5 10 15 20 25 Ciss GAApplications
* in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.MTP60N06HD Distributors
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