MTP6P20E Datasheet - Motorola

MTP6P20E TMOS POWER FET

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP6P20E/D ™ Data Sheet TMOS E-FET.™ Power Field Effect Transistor Designer's MTP6P20E Motorola Preferred Device P Channel Enhancement Mode Silicon Gate This advanced TMOS E FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain to source diode with a fast recovery time. Designed for low voltage, high speed switchi.

MTP6P20E Features

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* SOURCE VOLTAGE (VOLTS) Figure 7. Capacitance Variation 4 Motorola TMOS Power MOSFET Transistor Device Data MTP6P20E VGS, GATE

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* SOURCE VOLTAGE (VOLTS) 12 QT 10 VGS 8 6 4 2 Q3 0 0 5 VDS 10 15 Qg, TOTAL GATE CHARGE (nC) 20 25 Q1 Q2 80 120 160 1000 VDD = 100 V ID = 6.0

MTP6P20E_Motorola.pdf