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MTP6N60E TMOS POWER FET

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Description

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP6N60E/D ™ Data Sheet TMOS E-FET.™ Power Field Effect Transistor Designer's MTP6N60.

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Datasheet Specifications

Part number
MTP6N60E
Manufacturer
Motorola
File Size
156.71 KB
Datasheet
MTP6N60E_Motorola.pdf
Description
TMOS POWER FET

Features

* es an optimally snubbed inductive load. Power MOSFETs may be safely operated into an inductive load; however, snubbing reduces switching losses. 3200 Ciss C, CAPACITANCE (pF) VDS = 0 V VGS = 0 V TJ = 25°C 10000 TJ = 25°C VGS = 0 V Ciss C, CAPACITANCE (pF) 2400 1000 1600 Crss Ciss 100

Applications

* in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
* Robust High Voltage Termination

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