* es an optimally snubbed inductive load. Power MOSFETs may be safely operated into an inductive load; however, snubbing reduces switching losses. 3200 Ciss C, CAPACITANCE (pF) VDS = 0 V VGS = 0 V TJ = 25°C 10000 TJ = 25°C VGS = 0 V Ciss C, CAPACITANCE (pF) 2400 1000 1600 Crss Ciss 100
MTP6N60E Datasheet (156.71 KB)
MTP6N60E
Motorola
156.71 KB
Tmos power fet.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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™ Data Sheet TMOS E-FET.™ Power Field Effect Transistor
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