* chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low
* voltage, high
* frequency inverters, free wheeling diodes, and polarity protection diodes.
* Extremely Low vF
* Low Stored Charge,
1N5819
MotorolaInc
96.28 KB
Schottky barrier rectifiers.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by 1N5817/D
Axial Lead Rectifiers
. . . employing the Schottky Barrier principle in a lar.
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