SLD90N10G Datasheet - Msemitek

SLD90N10G 100V N-Channel MOSFET

This Power MOSFET is produced using Msemitek‘s advanced Shielding Gate MOSFET technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These device.

SLD90N10G Features

* - N-Channel:100V 90A RDS(on)Typ= 6.2mΩ@VGS = 10 V RDS(on)Typ= 8.6mΩ@VGS = 4.5V - Very Low On-resistance RDS(ON) - Low Crss - Fast switching - 100% avalanche tested - Improved dv/dt capability D G S D-PAK D G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EA

SLD90N10G Datasheet (964.05 KB)