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SLM100N03T - 30V N-Channel MOSFET

Datasheet Summary

Description

This Power MOSFET is produced using Maple semi‘s advanced planar stripeTRENCH technology.

This advanced technology has been especially tailored to minimize conduction loss, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • - N-Channel: 30V100A RDS(on)Typ= 2.9mΩ@VGS = 10 V RDS(on))Typ= 4.8mΩ@VGS = 4.5V - Very Low On-resistance RDS(ON) - LowCrss - Fast switching - 100% avalanche tested - Improved dv/dt capability D DD DD D DD D DFN5.
  • 6 G S S SG GSSS Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS PD R θJC TJ, TSTG TL Parameter Drain-Source Voltage Drain Current - Continuous (TC = 25℃) - Continuous (TC = 100℃) Drain Current - Pulsed (Note 1) Gate-Source Voltage.

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Datasheet Details

Part number SLM100N03T
Manufacturer Msemitek
File Size 1.05 MB
Description 30V N-Channel MOSFET
Datasheet download datasheet SLM100N03T Datasheet
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SLM100N03T SLM100N03T 30V N -Channel MOSFET LEAD FREE Pb RoHS General Description This Power MOSFET is produced using Maple semi‘s advanced planar stripeTRENCH technology. This advanced technology has been especially tailored to minimize conduction loss, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. Application PWM Application  Load Switch  Power Management Features - N-Channel: 30V100A RDS(on)Typ= 2.9mΩ@VGS = 10 V RDS(on))Typ= 4.8mΩ@VGS = 4.
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