Description
This Power MOSFET is produced using Msemitek‘s advanced TRENCH technology.
Features
- - N-Channel:60V 80A RDS(on)Typ= 6.1mΩ@VGS = 10V RDS(on)Typ= 7.1mΩ@VGS = 4.5V
- Very Low On-resistance RDS(ON) - Low Crss - Fast switching - 100% avalanche tested - Improved dv/dt capability
DD DD
D DD D
D
DFN5.
- 6
S S SG
GSSS
G S
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol VDSS
ID
IDM VGSS EAS PD R θJC TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current Drain Current
- Continuous (TC = 25℃) - Continuous (TC = 100℃) - Pulsed
(Note 1)
Gate-Source Voltage.