Description
This Power MOSFET is produced using Msemitek‘s advanced TRENCH technology.
Features
- - N-Channel:30V 80A RDS(on)Typ= 3.9mΩ@VGS = 10 V RDS(on))Typ= 6.8mΩ@VGS = 4.5V
- Very Low On-resistance RDS(ON) - Low Crss - Fast switching - 100% avalanche tested - Improved dv/dt capability
DDDD
DDDD
D
S SS G
GS SS
G S
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol VDSS
ID
IDM VGSS EAS PD R θJC TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current - Continuous (TC = 25℃)
- Continuous (TC = 100℃)
Drain Current - Pulsed
(Note 1)
Gate-Source Voltage
Single Pul.