* Forward biased second breakdown current capability IS/b = 2.5 A dc at VCE = 60V dc.
* Pb-free packages. (TO-3) Style 1: Pin 1. Base 2. Emitter Collector (Case) Dimensions Minimum Maximum A 1.550 (39.37) Reference B - 1.050 (26.67) C 0.250 (6.35) 0.335 (8.51) D 0.038 (0.97)
2N3772
Multicomp
293.89 KB
High power npn silicon power transistors.
1165892
High power NPN silicon power transistors.
These devices are designed for linear amplifiers, series pass regulators, and inductive
switching a.
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