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Bipolar Transistor
NPN
Collector 3
2 Base
1 Emitter
Description:
Silicon TO-126, PNP Power Transistor for use in power amplifier and switching excellent safe area limits
Maximum Ratings:
Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Base Current Total Device Dissipation (TC = +25°C)
Derate Above 25°C Operating Junction Temperature Range Storage Temperature Range
Symbol
VCBO VCEO VEBO
lC IB
PD TJ Tstg
Rating
40
5 4 1 40 320
-65 to +150
Unit
V
A W mW/°C °C
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23/04/13 V1.