AQV454 Features
* 1. Form B (Normally-closed) type Has been realized thanks to the built-in MOSFET processed by our proprietary method, DSD (Double-diffused and Selective Doping) method. Cross section of the normally-closed type of power MOS Passivation membrane Source electrode Gate electrode Intermediate insula
Datasheet Details
AQV454, AQV453
NAiS
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Photo mos relay.
This datasheet PDF includes multiple part numbers: AQV454, AQV453.
Please refer to the document for exact specifications by model.
AQV454 Distributor
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