20NP1006S Datasheet, Mosfet, NCE Power Semiconductor

20NP1006S Features

  • Mosfet
  • N-Channel VDS = 20V,ID =10A RDS(ON) < 14mΩ @ VGS=4.5V RDS(ON) < 18mΩ @ VGS=2.5V
  • P-Channel VDS = -20V,ID = -6A RDS(ON) < 45mΩ @ VGS=-4.5V RDS(ON) < 60mΩ @ VGS=-2.5V <

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Part number:

20NP1006S

Manufacturer:

NCE Power Semiconductor

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411.34kb

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📄 Datasheet

Description:

N and p-channel enhancement mode power mosfet. The NCE20NP1006S uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be

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20NP1006S Application

  • Applications General Features
  • N-Channel VDS = 20V,ID =10A RDS(ON) < 14mΩ @ VGS=4.5V RDS(ON) < 18mΩ @ VGS=2.5V
  • P-Channel VDS = -

TAGS

20NP1006S
and
P-Channel
Enhancement
Mode
Power
MOSFET
NCE Power Semiconductor

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