NCE0102M Datasheet, Mosfet, NCE Power Semiconductor

NCE0102M Features

• Mosfet
• VDS = 100V,ID = 2A RDS(ON) <240mΩ @ VGS=10V (Typ:210mΩ)
• High density cell design for ultra low Rdson
• Fully characterized avalanche voltage and current

PDF File Details

Part number:

NCE0102M

Manufacturer:

NCE Power Semiconductor

File Size:

288.96kb

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📄 Datasheet

Description:

N-channel enhancement mode power mosfet. The NCE0102M uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide v

NCE0102M Application

• Applications D G General Features
• VDS = 100V,ID = 2A RDS(ON) <240mΩ @ VGS=10V (Typ:210mΩ)
• High density cell design for ultra

TAGS

NCE0102M

NCE Power Semiconductor

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