NCE0218 Datasheet, Mosfet, NCE Power Semiconductor

NCE0218 Features

• Mosfet
• VDS =200V,ID =18A RDS(ON) < 80mΩ @ VGS=10V (Typ:64mΩ)
• High density cell design for ultra low Rdson
• Fully characterized avalanche voltage and current

PDF File Details

Part number:

NCE0218

Manufacturer:

NCE Power Semiconductor

File Size:

295.38kb

Download:

📄 Datasheet

Description:

N-channel enhancement mode power mosfet. The NCE0218 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide va

NCE0218 Application

• Applications General Features
• VDS =200V,ID =18A RDS(ON) < 80mΩ @ VGS=10V (Typ:64mΩ)
• High density cell design for ultra low R

TAGS

NCE0218

NCE Power Semiconductor

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