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NCE0218

N-Channel Enhancement Mode Power MOSFET

NCE0218 Features

* VDS =200V,ID =18A RDS(ON) < 80mΩ @ VGS=10V (Typ:64mΩ)

* High density cell design for ultra low Rdson

* Fully characterized avalanche voltage and current

* Good stability and uniformity with high EAS

* Excellent package for good heat dissipation

* Special process technolog

NCE0218 Datasheet (295.38 KB)

Preview of NCE0218 PDF

Datasheet Details

Part number:

NCE0218

Manufacturer:

NCE Power Semiconductor

File Size:

295.38 KB

Description:

N-channel enhancement mode power mosfet.

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TAGS

NCE0218 N-Channel Enhancement Mode Power MOSFET NCE Power Semiconductor

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