NCE0218D Datasheet, Mosfet, NCE Power Semiconductor

NCE0218D Features

• Mosfet
• VDS =200V,ID =18A RDS(ON) < 80mΩ @ VGS=10V (Typ:64mΩ)
• High density cell design for ultra low Rdson
• Fully characterized Avalanche voltage and current

PDF File Details

Part number:

NCE0218D

Manufacturer:

NCE Power Semiconductor

File Size:

399.50kb

Download:

📄 Datasheet

Description:

N-channel enhancement mode power mosfet. The NCE0218D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide v

NCE0218D Application

• Applications GENERAL FEATURES
• VDS =200V,ID =18A RDS(ON) < 80mΩ @ VGS=10V (Typ:64mΩ)
• High density cell design for ultra low R

TAGS

NCE0218D

NCE Power Semiconductor

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