NCE15P25JI Datasheet, Mosfet, NCE Power Semiconductor

NCE15P25JI Features

• Mosfet
• VDS =-150V,ID =-25A RDS(ON) <135mΩ @ VGS=-10V （Typ.=120mR） RDS(ON) <160mΩ @ VGS=-4.5V （Typ.=131mR）
• Super high dense cell design
• Advanced trench process tec

PDF File Details

Part number:

NCE15P25JI

Manufacturer:

NCE Power Semiconductor

File Size:

335.88kb

Download:

📄 Datasheet

Description:

P-channel enhancement mode power mosfet. The NCE15P25JI uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide

NCE15P25JI Application

• Applications General Features
• VDS =-150V,ID =-25A RDS(ON) <135mΩ @ VGS=-10V （Typ.=120mR） RDS(ON) <160mΩ @ VGS=-4.5V （Typ.=131mR）

TAGS

NCE15P25JI

NCE Power Semiconductor

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