NCE40ND0812S - N-Channel Enhancement Mode Power MOSFET

NCE Power Semiconductor

The NCE40ND0812S by NCE Power Semiconductor is a N-Channel Enhancement Mode Power MOSFET. Below is the official datasheet preview.

Datasheet Details

Part number	NCE40ND0812S
Manufacturer	NCE Power Semiconductor
File Size	526.51 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	NCE40ND0812S-NCEPowerSemiconductor.pdf
Additional preview pages of the NCE40ND0812S datasheet.

The NCE40ND0812S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

VDS =40V,ID =8A VDS =40V,ID =12A RDS(ON) < 18mΩ @ VGS=10V RDS(ON) < 14mΩ @ VGS=10V RDS(ON) < 28mΩ @ VGS=4.5V RDS(ON) < 20mΩ @ VGS=4.5V.
High density cell design for ultra low Rdson.
Fully characterized avalanche voltage and current Schematic diagram.

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Published: Jun 2, 2018 |