NCE40P06J - P-Channel Enhancement Mode Power MOSFET

NCE Power Semiconductor

📥 Download Datasheet

NCE40P06J Datasheet Preview — Preview of NCE40P06J PDF

Datasheet Details

Part number	NCE40P06J
Manufacturer	NCE Power Semiconductor
File Size	290.11 KB
Description	P-Channel Enhancement Mode Power MOSFET
Datasheet	NCE40P06J-NCEPowerSemiconductor.pdf

NCE40P06J Product details

Description

The NCE40P06J uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages .This device is suitable for use as a load switching application and a wide variety of other applications.

Features

VDS = -40V,ID = -6A RDS(ON) < 33mΩ @ VGS=-2.5V RDS(ON) < 45mΩ @ VGS=-4.5V D G S Schematic diagram.
Advanced trench MOSFET process technology.
Ultra low on-resistance with low gate charge.

📁 NCE40P06J Similar Datasheet

NCE40H12K - N-Channel MOSFET (VBsemi)
NCE4503 - SOP8 Plastic-Encapsulate MOSFETS (TY Semiconductor)
NCE4614 - Dual-Channel MOSFET (VBsemi)
NCE0103 - N-Channel 100V MOSFET (VBsemi)
NCE0157A2 - N-Channel Power MOSFET (VBsemi)
NCE01H16 - N-Channel MOSFET (VBsemi)
NCE02H10T - N-Channel Enhancement Mode Power MOSFET (H&M Semiconductor)
NCE1520 - N-Channel 150-V MOSFET (VBsemi)

Other Datasheets by NCE Power Semiconductor

NCE40P06S - P-Channel Enhancement Mode Power MOSFET
NCE40P05S - P-Channel Enhancement Mode Power MOSFET
NCE40P05Y - P-Channel Enhancement Mode Power MOSFET
NCE40P07S - P-Channel Enhancement Mode Power MOSFET
NCE40P13S - P-Channel Enhancement Mode Power MOSFET
NCE40P20Q - P-Channel Enhancement Mode Power MOSFET

Published: Jun 2, 2018 |