NCE40P07S Datasheet, Mosfet, NCE Power Semiconductor

NCE40P07S Features

• Mosfet
• VDS =-40V,ID =-6.2A RDS(ON) <25mΩ @ VGS=-10V RDS(ON) <30mΩ @ VGS=-4.5V
• High density cell design for ultra low Rdson
• Fully characterized avalanche voltage a

PDF File Details

Part number:

NCE40P07S

Manufacturer:

NCE Power Semiconductor

File Size:

362.48kb

Download:

📄 Datasheet

Description:

P-channel enhancement mode power mosfet. The NCE40P07S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide

NCE40P07S Application

• Applications General Features
• VDS =-40V,ID =-6.2A RDS(ON) <25mΩ @ VGS=-10V RDS(ON) <30mΩ @ VGS=-4.5V
• High density cell design

TAGS

NCE40P07S

NCE Power Semiconductor

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