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NCE8651Q N-Channel Enhancement Mode Power MOSFET

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Description

http://www.ncepower.com Pb Free Product NCE8651Q NCE N-Channel Enhancement Mode Power MOSFET .
The NCE8651Q uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

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Datasheet Specifications

Part number
NCE8651Q
Manufacturer
NCE Power Semiconductor
File Size
338.32 KB
Datasheet
NCE8651Q-NCEPowerSemiconductor.pdf
Description
N-Channel Enhancement Mode Power MOSFET

Features

* VDS =20V,ID =10A RDS(ON) < 11mΩ @ VGS=4.5V RDS(ON) < 11.5mΩ @ VGS=4V RDS(ON) < 12.5mΩ @ VGS=3.1V RDS(ON) < 15.5mΩ @ VGS=2.5V
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and current
* 2.5V Drive
* Common-drain type Schematic diagram Pi

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