NCE8651Q Datasheet, Mosfet, NCE Power Semiconductor

NCE8651Q Features

• Mosfet
• VDS =20V,ID =10A RDS(ON) < 11mΩ @ VGS=4.5V RDS(ON) < 11.5mΩ @ VGS=4V RDS(ON) < 12.5mΩ @ VGS=3.1V RDS(ON) < 15.5mΩ @ VGS=2.5V
• High density cell design for ultra low R

PDF File Details

Part number:

NCE8651Q

Manufacturer:

NCE Power Semiconductor

File Size:

338.32kb

Download:

📄 Datasheet

Description:

N-channel enhancement mode power mosfet. The NCE8651Q uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide v

NCE8651Q Application

• Applications General Features
• VDS =20V,ID =10A RDS(ON) < 11mΩ @ VGS=4.5V RDS(ON) < 11.5mΩ @ VGS=4V RDS(ON) < 12.5mΩ @ VGS=3.1V RDS(ON) <

TAGS

NCE8651Q

NCE Power Semiconductor

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