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NCE8651Q - N-Channel Enhancement Mode Power MOSFET

NCE Power Semiconductor

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Datasheet Details

Part number	NCE8651Q
Manufacturer	NCE Power Semiconductor
File Size	338.32 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	NCE8651Q-NCEPowerSemiconductor.pdf

NCE8651Q Product details

Description

The NCE8651Q uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

Features

VDS =20V,ID =10A RDS(ON) < 11mΩ @ VGS=4.5V RDS(ON) < 11.5mΩ @ VGS=4V RDS(ON) < 12.5mΩ @ VGS=3.1V RDS(ON) < 15.5mΩ @ VGS=2.5V.
High density cell design for ultra low Rdson.
Fully characterized avalanche voltage and current.
2.5V Drive.
Common-drain type Schematic diagram Pin Assignment.

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Published: Jun 2, 2018 |