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NCE8601B - N-Channel Enhancement Mode Power MOSFET

NCE Power Semiconductor

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Datasheet Details

Part number	NCE8601B
Manufacturer	NCE Power Semiconductor
File Size	319.80 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	NCE8601B-NCEPowerSemiconductor.pdf

NCE8601B Product details

Description

The NCE8601B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

Features

VDS = 30V,ID =8A RDS(ON) < 26mΩ @ VGS=4.5V RDS(ON) < 21mΩ @ VGS=10V ESD Rating: 2000V HBM.
High power and current handing capability.
Lead free product is acquired.
Surface mount package Schematic diagram Marking and pin Assignment.

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Published: May 22, 2015 |