NCEP40P80G Datasheet - NCE Power Semiconductor

NCEP40P80G P-Channel Super Trench Power MOSFET

The NCEP40P80G uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching.

NCEP40P80G Features

* VDS =-40V,ID =-80A RDS(ON)=6.3mΩ (typical) @ VGS=-10V RDS(ON)=9.0mΩ (typical) @ VGS=-4.5V

* Excellent gate charge x RDS(on) product(FOM)

* Very low on-resistance RDS(on)

* 150 °C operating temperature

* Pb-free lead plating 100% UIS TESTED! 100% ∆Vds TESTED! DFN 5X6 Top View

NCEP40P80G-NCEPowerSemiconductor.pdf