NCEP8818AS Datasheet (NCE Power Semiconductor) - N-Channel Super Trench Power MOSFET

NCEP8818AS, N-Channel Super Trench Power MOSFET

The NCEP8818AS uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance.

Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg.

This device is ideal for high-frequency switching

NCEP8818AS Features

* VDS =88V,ID =18A RDS(ON)=6.1mΩ (typical) @ VGS=10V RDS(ON)=7.1mΩ (typical) @ VGS=4.5V Schematic diagram

* Excellent gate charge x RDS(on) product(FOM)

* Very low on-resistance RDS(on)

* 150 °C operating temperature

* Pb-free lead plating

* 100% UIS tested Marking and pin