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NCEP8818AS Datasheet - NCE Power Semiconductor

N-Channel Super Trench Power MOSFET

NCEP8818AS Features

* VDS =88V,ID =18A RDS(ON)=6.1mΩ (typical) @ VGS=10V RDS(ON)=7.1mΩ (typical) @ VGS=4.5V Schematic diagram

* Excellent gate charge x RDS(on) product(FOM)

* Very low on-resistance RDS(on)

* 150 °C operating temperature

* Pb-free lead plating

* 100% UIS tested Marking and pin

NCEP8818AS General Description

The NCEP8818AS uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching.

NCEP8818AS Datasheet (377.10 KB)

Preview of NCEP8818AS PDF

Datasheet Details

Part number:

NCEP8818AS

Manufacturer:

NCE Power Semiconductor

File Size:

377.10 KB

Description:

N-channel super trench power mosfet.

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NCEP8818AS N-Channel Super Trench Power MOSFET NCE Power Semiconductor

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