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NCE30P12S - P-Channel Enhancement Mode Power MOSFET

NCE Power Semiconductor

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Datasheet Details

Part number	NCE30P12S
Manufacturer	NCE Power Semiconductor
File Size	330.66 KB
Description	P-Channel Enhancement Mode Power MOSFET
Datasheet	NCE30P12S-NCEPowerSemiconductor.pdf

NCE30P12S Product details

Description

The NCE30P12S uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V.

Features

VDS = -30V,ID = -12A RDS(ON) < 25mΩ @ VGS=-4.5V RDS(ON) < 16mΩ @ VGS=-10V Schematic diagram.
High Power and current handing capability.
Lead free product is acquired.
Surface mount package.

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Published: Jun 2, 2018 |