2SB1318
NEC
280.65kb
Pnp silicon transistor.
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2SB1314 - Silicon PNP Transistor
(ETC)
ISAHAYA ELECTRONICS CORPORATION
ISAHAYA ELECTRONICS CORPORATION
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2SB1315 - PNP Transistor
(INCHANGE)
isc Silicon PNP Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -120V(Min) ·Good Linearity of hFE ·Complement to Type .
2SB1315 - SILICON POWER TRANSISTOR
(SavantIC)
SavantIC Semiconductor
..
Product Specification
Silicon PNP Power Transistors
2SB1315
DESCRIPTION ·With TO-3PML package ·Low coll.
2SB1316 - Power Transistor
(Rohm)
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Power Transistor (−100V , −2A)
2SB1316
2SB1316
zFeatures 1) Darlington connection for high DC current gain. 2) Built-in resistor between.
2SB1316 - Silicon PNP Power Transistor
(Inchange Semiconductor)
isc Silicon PNP Power Transistor
DESCRIPTION ·Darlington connection for high DC current gain ·Built in resistor between base and emitter ·Built in da.
2SB1317 - Silicon PNP Transistor
(Panasonic Semiconductor)
Power Transistors
2SB1317
Silicon PNP triple diffusion planar type
For high power amplification Complementary to 2SD1975
20.0±0.5
Unit: mm
φ 3.3±0.2.
2SB1317 - PNP Transistor
(INCHANGE)
isc Silicon PNP Power Transistor
2SB1317
DESCRIPTION ·Good Linearity of hFE ·Wide Area of Safe Operation ·High DC Current-Gain Bandwidth Product ·Co.
2SB1317 - SILICON POWER TRANSISTOR
(SavantIC)
SavantIC Semiconductor
..
Product Specification
Silicon PNP Power Transistors
DESCRIPTION ·With TO-3PL package ·Complement to type .
2SB1319 - Silicon PNP Transistor
(Panasonic Semiconductor)
Transistor
2SB1319
Silicon PNP epitaxial planer type
For low-frequency power amplification
Unit: mm
6.9±0.1
0.4
2.5±0.1 1.0
1.0 2.4±0.2 2.0±0.2 3.5±.
2SB1300 - PNP SILICON TRANSISTOR
(NEC)
.
