Description
The 2SK2363/2SK2364 is N-Channel MOS Field Effect Transistor designed for high voltage switching applications.
Features
- 10.0±0.3.
- Low On-Resistance
2SK2363: RDS (on) = 0.5 Ω (VGS = 10 V, ID = 4.0 A) 2SK2364: RDS (on) = 0.6 Ω (VGS = 10 V, ID = 4.0 A)
3.2±0.2
4.5±0.2 2.7±0.2
Drain to Source Voltage (2SK2363/2SK2364) Gate to Source Voltage Drain Current (DC) Drain Current (pulse).
- Total Power Dissipation (Tc = 25 ˚C) Total Power Dissipation (TA = 25 ˚C) Channel Temperature Storage Temperature Single Avalanche Current.
- Single Avalanche Energy.
- PW ≤ 10 µs, Duty Cycle ≤ 1 %
VD.
2SK2364_NEC.pdf
