* Low On-state Resistance 5 RDS(on)1 = 28 mΩ MAX. (VGS = 10 V, ID = 15 A) RDS(on)2 = 45 mΩ MAX. (VGS = 4.0 V, ID = 15 A)
* Low Ciss : Ciss = 1500 pF TYP.
* Built-in Gate Protection Diode
* TO-251/TO-252 package (TO-251) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Drain to
2SK3385
NEC
42.07 KB
N-channel mosfet.
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3385
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
ORDERING INFORMATION
PART NUMBER 2SK3385 2SK3385-Z P.
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2SK3304
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DESCRIPTION
The 2SK3304 is N-Channel MOS FET device.
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FEATURES ·Drain Current : ID= 5A@ TC=25℃ ·Drain Source Voltage
: VDSS= 500V(Min) ·Static Drain-Source On-Res.
