* Low On-state Resistance 5 5 RDS(on)1 = 21 mΩ MAX. (VGS = 10 V, ID = 17 A) RDS(on)2 = 36 mΩ MAX. (VGS = 4.0 V, ID = 17 A)
* Low Ciss : Ciss = 2100 pF TYP.
* Built-in Gate Protection Diode
* TO-251/TO-252 package (TO-251) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Drain
2SK3386
NEC
42.09 KB
N-channel mosfet.
DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3386 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION PART NUMBER 2SK3386 2SK3386-Z P.
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