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NE6510179A 1 W L-BAND POWER GaAs HJ-FET

NE6510179A Description

DATA SHEET N-CHANNEL GaAs HJ-FET NE6510179A 1 W L-BAND POWER GaAs HJ-FET .
The NE6510179A is a 1 W GaAs HJ-FET designed for middle power transmitter applications for mobile communication and wireless PC LAN systems.

NE6510179A Features

* : Pout = +31.5 dBm TYP. @VDS = 3.5 V, IDset = 200 mA, f = 900 MHz, Pin = +20 dBm Pout = +32.5 dBm TYP. @VDS = 3.5 V, IDset = 200 mA, f = 1 900 MHz, Pin = +25 dBm Pout = +35.0 dBm TYP. @VDS = 5.0 V, IDset = 200 mA, f = 1 900 MHz, Pin = +25 dBm
* High linear gain : GL = 15 dB TYP. @VDS = 3.5 V

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Datasheet Details

Part number
NE6510179A
Manufacturer
NEC
File Size
77.80 KB
Datasheet
NE6510179A_NEC.pdf
Description
1 W L-BAND POWER GaAs HJ-FET

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