NE68939 Datasheet (NEC) - NPN SILICON EPITAXIAL TRANSISTOR

NE68939, NPN SILICON EPITAXIAL TRANSISTOR

The NE68939 is a low voltage, NPN Silicon Bipolar Transistor for pulsed power applications.

The device is designed to operate from a 3.6 V supply, and deliver over 1/4 watt of power output at frequencies up to 2.0 GHZ with a 1:8 duty cycle.

These characteristics make it an ideal device for TX driver

NE68939 Features

* OUTPUT POWER AT 1dB COMPRESSION POINT: 24.5 dBm TYP @F = 1.9 GHZ, VCE = 3.6 V, Class AB, Duty 1/8

* 4 PIN MINI MOLD PACKAGE: NE68939 NE68939 OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE 39 +0.2 2.8 -0.3 +0.2 1.5 -0.1 +0.10 0.4 -0.05 (LEADS 2, 3, 4) 2.9 ± 0.2 0.95 0.85 2 3