NE721S01 Datasheet, mesfet equivalent, NEC

NE721S01 Features

• Mesfet
• HIGH POWER GAIN: 7 dB TYP at 12 GHz
• HIGH OUTPUT POWER: 15 dBm TYP at 12 GHz
• LG = 0.8 µm, WG = 330 µm
• LOW PHASE NOISE: -110 dBc/Hz TYP at 100 KHz

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Part number:

NE721S01

Manufacturer:

NEC

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📄 Datasheet

Description:

General purpose l to x-band gaas mesfet. The NE721S01 is a low cost 0.8 µm recessed gate GaAs MESFET, suitable for both amplifier and oscillator applications. Larger gate geo

NE721S01 Application

• Applications Larger gate geometry make this device ideal for second and third stages of low noise amplifiers operating in the 1-12 GHz frequency ra

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NE721S01

NEC

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