NE721S01 GENERAL PURPOSE L TO X-BAND GaAs MESFET

NEC

Description

www.DataSheet4U.com GENERAL PURPOSE L TO X-BAND GaAs MESFET .
The NE721S01 is a low cost 0.

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Datasheet Specifications

Part number: NE721S01
Manufacturer: NEC
File Size: 203.02 KB
Datasheet: NE721S01_NEC.pdf
Description: GENERAL PURPOSE L TO X-BAND GaAs MESFET

Features

* HIGH POWER GAIN: 7 dB TYP at 12 GHz
* HIGH OUTPUT POWER: 15 dBm TYP at 12 GHz
* LG = 0.8 µm, WG = 330 µm
* LOW PHASE NOISE: -110 dBc/Hz TYP at 100 KHz offset at f = 12 GHz
* LOW COST PLASTIC PACKAGE 2 NE721S01 OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLI

Applications

* Larger gate geometry make this device ideal for second and third stages of low noise amplifiers operating in the 1-12 GHz frequency range. The NE721S01 is fabricated with an epitaxial process resulting in excellent phase noise in oscillator applications up to 14 GHz. NEC's latest high performance/

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NE721S01 GENERAL PURPOSE X-BAND GaAs MESFET NEC

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