Datasheet Details
- Part number
- NE721S01
- Manufacturer
- NEC
- File Size
- 203.02 KB
- Datasheet
- NE721S01_NEC.pdf
- Description
- GENERAL PURPOSE L TO X-BAND GaAs MESFET
NE721S01 Description
www.DataSheet4U.com GENERAL PURPOSE L TO X-BAND GaAs MESFET .
The NE721S01 is a low cost 0.
NE721S01 Features
* HIGH POWER GAIN: 7 dB TYP at 12 GHz
* HIGH OUTPUT POWER: 15 dBm TYP at 12 GHz
* LG = 0.8 µm, WG = 330 µm
* LOW PHASE NOISE: -110 dBc/Hz TYP at 100 KHz offset at f = 12 GHz
* LOW COST PLASTIC PACKAGE
2
NE721S01
OUTLINE DIMENSIONS (Units in mm)
PACKAGE OUTLI
NE721S01 Applications
* Larger gate geometry make this device ideal for second and third stages of low noise amplifiers operating in the 1-12 GHz frequency range. The NE721S01 is fabricated with an epitaxial process resulting in excellent phase noise in oscillator applications up to 14 GHz. NEC's latest high performance/
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