NE722S01

NECs C TO X BAND N-CHANNEL GaAs MES FET

NEC

* HIGH POWER GAIN: GS = 6 dB TYP at f = 12 GHz

* OUTPUT POWER (at 1 dB compression): 15 dB TYP at f = 12 GHz

* LOW NOISE/HIGH GAIN: NF = 0.9 dB TYP, Ga = 12 dB TYP at f = 4 GHz

* GATE LENGTH: LG = 0.8 µm (recessed gate)

* GATE WIDTH: WG = 400 µm 2 OUTLINE DIM

NE722S01

NEC

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Necs c to x band n-channel gaas mes fet.

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NE722S01 NECs BAND N-CHANNEL GaAs MES FET NEC

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