NE722S01 Datasheet, Fet, NEC

NE722S01 Features

• Fet
• HIGH POWER GAIN: GS = 6 dB TYP at f = 12 GHz
• OUTPUT POWER (at 1 dB compression): 15 dB TYP at f = 12 GHz
• LOW NOISE/HIGH GAIN: NF = 0.9 dB TYP, Ga = 12 dB T

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Part number:

NE722S01

Manufacturer:

NEC

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128.75kb

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📄 Datasheet

Description:

Necs c to x band n-channel gaas mes fet. NEC's NE722S01 is a low cost GaAs MESFET suitable for both amplifier and oscillator applications through X-band. The device features

NE722S01 Application

• Applications through X-band. The device features a 0.8 micron recessed gate, triple epitaxial technology and is fabricated using ion implantation fo

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