NE722S01 - NECs C TO X BAND N-CHANNEL GaAs MES FET

NEC

NE722S01 Description

NEC's C TO X BAND N-CHANNEL GaAs MES FET NE722S01 .
NEC's NE722S01 is a low cost GaAs MESFET suitable for both amplifier and oscillator applications through X-band.

NE722S01 Features

* HIGH POWER GAIN: GS = 6 dB TYP at f = 12 GHz
* OUTPUT POWER (at 1 dB compression): 15 dB TYP at f = 12 GHz
* LOW NOISE/HIGH GAIN: NF = 0.9 dB TYP, Ga = 12 dB TYP at f = 4 GHz
* GATE LENGTH: LG = 0.8 µm (recessed gate)
* GATE WIDTH: WG = 400 µm 2 OUTLINE DIM

📥 Download Datasheet

NE722S01 Datasheet Preview — Preview of NE722S01 PDF

Datasheet Details

Part number: NE722S01
Manufacturer: NEC
File Size: 128.75 KB
Datasheet: NE722S01_NEC.pdf
Description: NECs C TO X BAND N-CHANNEL GaAs MES FET

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📌 All Tags

NECs BAND N-CHANNEL GaAs MES FET NEC

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