NE97833
NEC
43.78kb
Pnp silicon high frequency transistor. The NE97833 PNP silicon transistor is designed for ultrahigh speed current mode switching applications and microwave amplifiers up to
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NE97733 - SILICON TRANSISTOR
(California Eastern Labs)
SILICON TRANSISTOR
NE97733
PNP SILICON HIGH FREQUENCY TRANSISTOR
FEATURES
• HIGH GAIN BANDWIDTH PRODUCT: fT = 8.5 GHz TYP • HIGH SPEED SWITCHING CHA.
NE9000xx - (NE9000/1/2 Series) Ku-Band Medium Power GaAs MESFET
(NEC Electronics)
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NE900175 - (NE9000/1/2 Series) Ku-Band Medium Power GaAs MESFET
(NEC Electronics)
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NE9001xx - (NE9000/1/2 Series) Ku-Band Medium Power GaAs MESFET
(NEC Electronics)
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NE9002xx - (NE9000/1/2 Series) Ku-Band Medium Power GaAs MESFET
(NEC Electronics)
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NE944 - NPN SILICON OSCILLATOR AND MIXER TRANSISTOR
(NEC)
NPN SILICON OSCILLATOR AND MIXER TRANSISTOR
FEATURES
• LOW COST • HIGH GAIN BANDWIDTH PRODUCT: fT = 2000 MHz TYP • LOW COLLECTOR TO BASE TIME CONSTANT.
NE94430 - NPN SILICON OSCILLATOR AND MIXER TRANSISTOR
(NEC)
NPN SILICON OSCILLATOR AND MIXER TRANSISTOR
FEATURES
• LOW COST • HIGH GAIN BANDWIDTH PRODUCT: fT = 2000 MHz TYP • LOW COLLECTOR TO BASE TIME CONSTANT.
NE94433 - NPN SILICON OSCILLATOR AND MIXER TRANSISTOR
(NEC)
NPN SILICON OSCILLATOR AND MIXER TRANSISTOR
FEATURES
• LOW COST • HIGH GAIN BANDWIDTH PRODUCT: fT = 2000 MHz TYP • LOW COLLECTOR TO BASE TIME CONSTANT.
NE960R2 - 0.2 W X / Ku-BAND POWER GaAs MES FET
(NEC)
PRELIMINARY DATA SHEET
N-CHANNEL GaAs MES FET
NE960R2 SERIES
0.2 W X, Ku-BAND POWER GaAs MES FET
DESCRIPTION
The NE960R2 Series are 0.2 W GaAs MES .
NE960R200 - 0.2 W X / Ku-BAND POWER GaAs MES FET
(NEC)
PRELIMINARY DATA SHEET
N-CHANNEL GaAs MES FET
NE960R2 SERIES
0.2 W X, Ku-BAND POWER GaAs MES FET
DESCRIPTION
The NE960R2 Series are 0.2 W GaAs MES .