UPA1722 Datasheet | NEC

DESCRIPTION The µPA1722 is N-Channel MOS Field Effect Transistor designed for DC/DC converters and power management applications of notebook puters. FEATURES - Low on-resistance 1.8 MAX. - Small and surface mount package (Power SOP8) 0.05 MIN. - Built-in G-S protection diode - Low Ciss: Ciss = 980 p F TYP. +0.10 - 0.05 - - - RDS(on)1 = 21.0 mΩ MAX. (VGS = 10 V, ID = 4.5 A) RDS(on)2 = 29.0 mΩ MAX. (VGS = 4.5 V, ID = 4.5 A) RDS(on)3 = 32.0 mΩ MAX. (VGS = 4.0 V, ID = 4.5 A) 1 5.37 MAX. 6.0 ±0.3 4.4 0.8 0.5 ±0.2 0.10 1.27 0.78 MAX. 0.40 +0.10 - 0.05 0.12 M - ORDERING INFORMATION PART NUMBER PACKAGE Power SOP8 µPA1722G ABSOLUTE MAXIMUM RATINGS (TA = 25°C, All terminals are connected.) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) Drain Current (pulse) Note1 Note2 VDSS VGSS ID(DC) ID(pulse) PT Tch Tstg 30 ±20 ±9 ±36 2.0 150 - 55 to +150 V V A A W °C °C EQUIVALENT CIRCUIT Drain Total Power Dissipation (TA = 25°C) Channel Temperature Storage Temperature Gate Body Diode Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1 % 2. Mounted on ceramic substrate of 1200 mm x 2.2 mm...