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UPA1727 - N-Channel Power MOSFET

Datasheet Summary

Description

The µPA1727 is N-Channel MOS Field Effect Transistor designed for high current switching applications.

Features

  • Single chip type.
  • Low On-state Resistance 1.44 5 5 5 5 RDS(on)1 = 14 mΩ (TYP. ) (VGS = 10 V, ID = 5.0 A) RDS(on)2 = 17 mΩ (TYP. ) (VGS = 4.5 V, ID = 5.0 A) RDS(on)3 = 19 mΩ (TYP. ) (VGS = 4.0 V, ID = 5.0 A).
  • Low Ciss : Ciss = 2400 pF (TYP. ).
  • Built-in G-S protection diode.
  • Small and surface mount package (Power SOP8) 1.8 Max. 1 5.37 Max. 4 6.0 ±0.3 4.4 +0.10.
  • 0.05 0.8 0.15 0.05 Min. 0.5 ±0.2 0.10 1.27 0.40 0.78 Max. 0.12 M +0.10.

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Datasheet Details

Part number UPA1727
Manufacturer NEC
File Size 38.93 KB
Description N-Channel Power MOSFET
Datasheet download datasheet UPA1727 Datasheet
Additional preview pages of the UPA1727 datasheet.

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Full PDF Text Transcription

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DATA SHEET MOS FIELD EFFECT TRANSISTOR µPA1727 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The µPA1727 is N-Channel MOS Field Effect Transistor designed for high current switching applications. PACKAGE DRAWING (Unit : mm) 8 5 1, 2, 3 ; Source 4 ; Gate 5, 6, 7, 8 ; Drain FEATURES • Single chip type • Low On-state Resistance 1.44 5 5 5 5 RDS(on)1 = 14 mΩ (TYP.) (VGS = 10 V, ID = 5.0 A) RDS(on)2 = 17 mΩ (TYP.) (VGS = 4.5 V, ID = 5.0 A) RDS(on)3 = 19 mΩ (TYP.) (VGS = 4.0 V, ID = 5.0 A) • Low Ciss : Ciss = 2400 pF (TYP.) • Built-in G-S protection diode • Small and surface mount package (Power SOP8) 1.8 Max. 1 5.37 Max. 4 6.0 ±0.3 4.4 +0.10 –0.05 0.8 0.15 0.05 Min. 0.5 ±0.2 0.10 1.27 0.40 0.78 Max. 0.12 M +0.10 –0.
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