Datasheet Summary
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ PA1726
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
PACKAGE DRAWING (Unit : mm)
8 5 1,2,3 ; Source ; Gate 4 5,6,7,8 ; Drain
DESCRIPTION
The µPA1726 is N-Channel MOS Field Effect Transistor designed for power management 5 applications of notebook puters and so on.
Features
- 2.5-V gate drive and low on-resistance RDS(on)1 = 9.1 mΩ MAX. (VGS = 4.5 V, ID = 6.0 A) 5 5
RDS(on)2 = 10.0 mΩ MAX. (VGS = 4.0 V, ID = 6.0 A)
1.8 MAX.
1 5.37 MAX.
6.0 ±0.3 4.4
+0.10
- 0.05
RDS(on)3 = 12.5 mΩ MAX. (VGS = 2.5 V, ID = 6.0 A)
- Low Ciss: Ciss = 2700 pF TYP.
- Built-in G-S protection diodes
- Small and surface mount package (Power...