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UPA808T - NPN Transistor

UPA808T Description

DATA SHEET SILICON TRANSISTOR µPA808T MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ELEMENTS) SUPER MINI MOLD FE.

UPA808T Features

* Low Noise NF = 1.3 dB TYP. @VCE = 2 V, IC = 3 mA, f = 2 GHz NF = 1.3 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz
* A Super Mini Mold Package Adopted
* Built-in 2 Transistors (2 × 2SC5184) 2.0±0.2 PACKAGE DRAWINGS (Unit: mm) 2.1±0.1 1.25±0.1 1.3 ORDERING INFORMATION PART NUM

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Datasheet Details

Part number
UPA808T
Manufacturer
NEC
File Size
65.40 KB
Datasheet
UPA808T_NEC.pdf
Description
NPN Transistor

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NPN Transistor NEC
NEC UPA808T-like datasheet