* Low noise: NF = 1.2 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA
* High gain: |S21e|2 = 9.0 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA
* Flat-lead 6-pin thin-type ultra super minimold
* Built-in 2 transistors (2 × 2SC5006) ORDERING INFORMATION Part Number Package Flat-
UPA810TC
NEC
53.62 KB
Npn silicon epitaxial transistor.
DATA SHEET
NPN SILICON RF TWIN TRANSISTOR
µPA810TC
NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 × 2SC5006) FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUP.
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