UPA810TC NPN SILICON EPITAXIAL TRANSISTOR

NEC

Description

DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA810TC NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 × 2SC5006) FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUP.
The µPA810TC has built-in low-voltage two transistors which are designed to amplify low noise in the VHF band to the UHF band. Low.

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Datasheet Specifications

Part number: UPA810TC
Manufacturer: NEC
File Size: 53.62 KB
Datasheet: UPA810TC_NEC.pdf
Description: NPN SILICON EPITAXIAL TRANSISTOR

Features

* Low noise: NF = 1.2 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA
* High gain: |S21e|2 = 9.0 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA
* Flat-lead 6-pin thin-type ultra super minimold
* Built-in 2 transistors (2 × 2SC5006) ORDERING INFORMATION Part Number Package Flat-

UPA810TC Distributors

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UPA810TC NPN SILICON EPITAXIAL TRANSISTOR NEC

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