* Low Noise NF = 1.4 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA 0.65 0.65
* High Gain 1.3 |S21e|2 = 12 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA
* A Small Mini Mold Package Adopted
* Built-in 2 Transistors (2 × 2SC4227) 2.0±0.2 2 3 ORDERING INFORMATION PART NUMBE
UPA812T
NEC
50.06 KB
High-frequency low noise amplifier npn silicon epitaxial transistor.
PRELIMINARY DATA SHEET
SILICON TRANSISTOR
µPA812T
HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 × 2SC4227) S.
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