UPA811T HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR

NEC

Description

DATA SHEET SILICON TRANSISTOR µPA811T HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 × 2SC4228) SMALL MINI MO.

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Datasheet Specifications

Part number: UPA811T
Manufacturer: NEC
File Size: 49.15 KB
Datasheet: UPA811T_NEC.pdf
Description: HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR

Features

* Low Noise NF = 1.9 dB TYP. @ f = 2 GHz, VCE = 1 V, IC = 3 mA 1 0.65 0.65 1.3 |S21e|2 = 6.5 dB TYP. @ f = 2 GHz, VCE = 1 V, IC = 3 mA
* A Small Mini Mold Package Adopted
* Built-in 2 Transistors (2 × 2SC4228) 2.0±0.2 2 3 ORDERING INFORMATION 0.9±0.1 PART NUMBER QUANT

Applications

* of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic

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UPA811T HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR NEC

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