UPD44323362 Datasheet (NEC) - 32M-BIT CMOS SYNCHRONOUS FAST STATIC RAM

UPD44323362, 32M-BIT CMOS SYNCHRONOUS FAST STATIC RAM

The µPD44323362 is a 1,048,576 words by 36 bits synchronous static RAM fabricated with advanced CMOS technology using Full-CMOS six-transistor memory cell.

The µPD44323362 is suitable for applications which require high-speed, low voltage, high-density memory and wide bit configuration, such as cach

UPD44323362 Features

* Fully synchronous operation

* HSTL Input / Output levels

* Fast clock access time: 2.0 ns / 250 MHz

* Asynchronous output enable control: /G

* Byte write control: /SBa (DQa1 to DQa9), /SBb (DQb1 to DQb9), /SBc (DQc1 to DQc9), /SBd (DQd1 to DQd9)

* Co