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PE6W2EA, PE6W2EA-NIKO N-Channel Field Effect Transistor

PE6W2EA Description

NIKO-SEM PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 18mΩ N-Channel Enhancement Mode Field Effect Transistor PE6W2EA PDFN 3x3P Halogen-Free & Lead-Fr.

PE6W2EA Features

* Pb
* Free, Halogen Free and RoHS compliant.
* Low RDS(on) to Minimize Conduction Losses.
* Ohmic Region Good RDS(on) Ratio.
* Optimized Gate Charge to Minimize Switching Losses.
* Products Integrated ESD diode with ESD Protected up to 2KV. ESD Protect

PE6W2EA Applications

* Protection Circuits Applications.
* Computer for DC to DC Converters Applications. #1 S S S G G. GATE D. DRAIN S. SOURCE 100% UIS Tested 100% Rg Tested ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Drain-Source Voltage Gate-So

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: PE6W2EA, PE6W2EA-NIKO. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
PE6W2EA, PE6W2EA-NIKO
Manufacturer
NIKO-SEM
File Size
364.41 KB
Datasheet
PE6W2EA-NIKO-SEM.pdf
Description
N-Channel Field Effect Transistor
Note
This datasheet PDF includes multiple part numbers: PE6W2EA, PE6W2EA-NIKO.
Please refer to the document for exact specifications by model.

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N-Channel Field Effect Transistor NIKO-SEM
NIKO-SEM PE6W2EA-like datasheet