PE636BA Datasheet - NIKO-SEM

PE636BA N-Channel Field Effect Transistor

NIKO-SEM N-Channel Enhancement Mode PE636BA Field Effect Transistor PDFN 3x3P Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 9mΩ ID 33A D G S D D DD #1 S S S G G : GATE D : DRAIN S : SOURCE ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage Gate-Source Voltage TC = 25 °C Continuous Drain Current3 TC = 100 °C TA = 25 °C Pulsed Drain Current1 TA = 70 °C Avalanche Current Avalanc.

PE636BA Datasheet (386.55 KB)